2SK3069 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3069
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 6 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
G
123
REJ03G1062-1100
(Previous: ADE-208-694I)
Rev.11.00
Sep 07, 2005
D
1. Gate
2. Drain
(Flange)
3. Source
S
Rev.11.00 Sep 07, 2005 page 1 of 7