2SK3000_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel MOS FET Low Frequency Power Switching

2SK3000
Silicon N Channel MOS FET
Low Frequency Power Switching
Features
• Low on-resistance
R_DS(on) = 0.16 Ω typ. (V_GS = 10 V, I_D = 450 mA)
• 4 V gate drive devices.
• Small package (MPAK)
• Expansive drain to source surge power capability
Outline
MPAK
D
3
3
2
G
1
S
Note: Marking is “ZY–”.
Data Sheet
R07DS1134EJ0400
Rev.4.00
Jan 10, 2014
1
2
1. Source
2. Gate
3. Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
V_DSS
Gate to source voltage
V_GSS
Drain current
Drain peak current
I_D
I_{D(pulse)Note1}
Reverse drain current
Channel dissipation
I_DR
Pch ^Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1 %
2. When using the glass epoxy board (10 mm x 10 mm x 1 mm^t )
Ratings
40
±10
1.0
4.0
1.0
400
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
mW
°C
°C
R07DS1134EJ0400 Rev.4.00
Jan 10, 2014
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