2SK2980 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2980
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 0.2 Ω typ. (V_GS = 4 V, I_D = 500 mA)
• 2.5 V gate drive devices.
• Small package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
G
2
Note: Marking is “ZZ–”
REJ03G1061-0400
(Previous: ADE-208-571B)
Rev.4.00
Sep 07, 2005
D
1. Source
2. Gate
3. Drain
S
Rev.4.00 Sep 07, 2005 page 1 of 6