|
2SK2959 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching | |||
|
2SK2959
Silicon N Channel MOS FET
High Speed Power Switching
Features
⢠Low on-resistance
RDS(on) = 7 m⦠typ.
⢠4 V gate drive devices.
⢠High speed switching
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
G
123
REJ03G1059-0500
(Previous: ADE-208-569C)
Rev.5.00
Sep 07, 2005
D
1. Gate
2. Drain
(Flange)
3. Source
S
Rev.5.00 Sep 07, 2005 page 1 of 6
|
▷ |