2SK2957 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2957(L), 2SK2957(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 7 mΩ typ.
• 4 V gate drive devices.
• High speed switching
Outline
REJ03G1057-0600
(Previous: ADE-208-567D)
Rev.6.00
Sep 07, 2005
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
4
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
D
4
G
1
2
3
123
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.4.00 Sep 07, 2005 page 1 of 7