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2SK2937 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching
2SK2937
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS =0.026 Ω typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1051-0500
(Previous: ADE-208-560C)
Rev.5.00
Sep 07, 2005
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
G
1. Gate
2. Drain
3. Source
12 3
S
Rev.4.00 Sep 07, 2005 page 1 of 7