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2SK2869 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching
2SK2869(L), 2SK2869(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS = 0.033 Ω typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1037-0200
(Previous: ADE-208-570)
Rev.2.00
Sep 07, 2005
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2))
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
4
D
G
12 3
1
23
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00 Sep 07, 2005 page 1 of 8