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2SK2796 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching
2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 0.12 Ω typ.
• 4 V gate drive devices.
• High speed switching
Outline
REJ03G1034-0500
(Previous: ADE-208-534C)
Rev.5.00
Sep 07, 2005
RENESAS Package code: PRSS0004ZD-A
(Package name: DPAK(L)-(1))
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
4
D
G
12 3
1
23
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.5.00 Sep 07, 2005 page 1 of 8