2SK2788_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

2SK2788
Silicon N Channel MOS FET
High Speed Power Switching
Features
 Low on-resistance
R_DS(on) = 0.12  typ (V_GS = 10 V, I_D = 1 A)
 Low drive current
 High speed switching
 4 V gate drive devices.
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK)
21
3
4
Preliminary Datasheet
R07DS0511EJ0300
(Previous: REJ03G1033-0200)
Rev.3.00
Jul 27, 2011
D
1. Gate
2. Drain
G
3. Source
4. Drain
S
Note: Marking is “VY”
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
V_DSS
V_GSS
I_D
I_D(pulse)*¹
I_DR
Pch*²
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW  100 s, duty cycle  10 %
2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm)
Ratings
60
20
2
4
2
1
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS0511EJ0300 Rev.3.00
Jul 27, 2011
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