2SK2788 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2788
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 0.12 Ω typ (V_GS = 10 V, I_D = 1 A)
• Low drive current
• High speed switching
• 4 V gate drive devices.
REJ03G1033-0200
(Previous: ADE-208-538)
Rev.2.00
Sep.07,2005
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK ^R )
21
3
4
D
1. Gate
2. Drain
G
3. Source
4. Drain
Note: Marking is “VY”
S
*UPAK is a trademark of Renesas Technology Corp.
Rev.2.00 Sep. 07, 2005 page 1 of 6