2SK1697 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1697
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source.
• Suitable for DC – DC converter, motor drive, power switch, solenoid drive
REJ03G1373-0200
(Previous: ADE-208-1313)
Rev.2.00
May 11, 2006
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK ^R )
21
3
4
Note: Marking is “EY”.
D
G
S
1. Gate
2. Drain
3. Source
4. Drain
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
V_DSS
Gate to source voltage
V_GSS
Drain current
Drain peak current
I_D
I_D(pulse)*1
Body to drain diode reverse drain current
Channel dissipation
I_DR
Pch^*2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the alumina ceramic board (12.5 × 20 × 0.7 mm)
Ratings
60
±20
0.5
1.5
0.5
1
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.2.00 May 11, 2006 page 1 of 6