2SJ574_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon P Channel MOS FET High Speed Switching

2SJ574
Silicon P Channel MOS FET
High Speed Switching
Features
• Low on-resistance
R_DS = 1.1 Ω typ. (V_GS = –10 V, I_D = –150 mA)
R_DS = 2.2 Ω typ. (V_GS = –4 V, I_D = –150 mA)
• 4 V gate drive device.
• Small package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
Note: Marking is BP
3
G
1
2
Preliminary Datasheet
R07DS0574EJ0500
Rev.5.00
Jan 10, 2014
D
1. Source
2. Gate
3. Drain
S
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
Pch ^{Note 2}
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7mm)
Ratings
–30
±20
–300
–1.2
–300
400
150
–55 to +150
(Ta = 25°C)
Unit
V
V
mA
A
mA
mW
°C
°C
R07DS0574EJ0500 Rev.5.00
Jan 10, 2014
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