2SJ553 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching

2SJ553(L), 2SJ553(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0900-0400
(Previous: ADE-208-650B)
Rev.4.00
Sep 07, 2005
Features
• Low on-resistance
R_{DS (on)} = 0.028 Ω typ.
• Low drive current.
• 4 V gate drive devices.
• High speed switching.
Outline
RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (L) )
(Package name: LDPAK (S)-(1) )
D
4
4
1
2
3
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.4.00 Sep 07, 2005 page 1 of 8