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2SJ539 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching | |||
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2SJ539
Silicon P Channel MOS FET
Description
High speed power switching
Features
⢠Low on-resistance
RDS (on) = 0.16 ⦠typ.
⢠Low drive current
⢠4 V gate drive devices
⢠High speed switching
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
123
G
S
REJ03G0886-0300
(Previous: ADE-208-657A)
Rev.3.00
Sep 07, 2005
1. Gate
2. Drain (Flange)
3. Source
Rev.3.00 Sep 07, 2005 page 1 of 7
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