2SJ529 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching

2SJ529(L), 2SJ529(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0879-0300
(Previous: ADE-208-654A)
Rev.3.00
Sep 07, 2005
Features
• Low on-resistance
R_{DS (on)} = 0.12 Ω typ.
• 4 V gate drive devices
• High speed switching
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
4
D
123
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.3.00 Sep 07, 2005 page 1 of 8