2SJ526 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching

2SJ526
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
R_{DS (on)} = 0.11 Ω typ.
• Low drive current
• 4 V gate drive devices
• High speed switching
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
123
G
S
REJ03G0876-0600
Rev.6.00
Jun 05, 2006
1. Gate
2. Drain
3. Source
Rev.6.00 Jun 05, 2006 page 1 of 7