2SJ517 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching

2SJ517
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0874-0400
(Previous: ADE-208-575B)
Rev.4.00
Sep 07, 2005
Features
• Low on-resistance
R_{DS (on)} = 0.18 Ω typ. (at V_GS = –4 V, I_D = –1 A)
• Low drive current
• High speed switching
• 2.5 V gate drive devices.
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK ^R )
D
321
G
4
1. Gate
2. Drain
3. Source
4. Drain
Note: Marking is “YY”.
S
*UPAK is a trademark of Renesas Technology Corp.
Rev.4.00 Sep 07, 2005 page 1 of 6