2SJ506 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching

2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0873-0500
(Previous: ADE-208-548C)
Rev.5.00
Sep 07, 2005
Features
• Low on-resistance
R_{DS (on)} = 0.065 Ω typ. (at V_GS = –10 V, I_D = –5 A)
• Low drive current
• High speed switching
• 4 V gate drive devices.
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
4
D
123
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.5.00 Sep 07, 2005 page 1 of 7