2SJ505 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching

2SJ505(L), 2SJ505(S)
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
R_{DS (on)} = 0.017 Ω typ.
• Low drive current.
• 4 V gate drive devices.
• High speed switching.
Outline
REJ03G0872-0500
Rev.5.00
Jun 05, 2006
RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (L) )
(Package name: LDPAK (S)-(1) )
D
4
4
12
3
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.5.00 Jun 05, 2006 page 1 of 8