2SJ496_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon P Channel MOS FET

2SJ496
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
R_{DS (on)} = 0.12 Ω typ. (at V_GS = –10 V, I_D = –2.5 A)
• 4 V gate drive devices.
• Large current capacitance
I_D = –5 A
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
321
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 100 μs, duty cycle ≤ 10%
2. Value at Ta = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
G
Symbol
V_DSS
V_GSS
I_D
I_{D (pulse)} ^{Note 1}
I_DR
I_AP ^{Note 3}
E_AR ^{Note 3}
Pch ^{Note 2}
Tch
Tstg
Preliminary Datasheet
R07DS0433EJ0400
(Previous: REJ03G0870-0300)
Rev.4.00
Jun 07, 2011
D
1. Source
2. Drain
3. Gate
S
Value
–60
±20
–5
–20
–5
–5
2.14
0.9
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
R07DS0433EJ0400 Rev.4.00
Jun 07, 2011
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