2SJ486 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET Low FrequencyPower Switching

2SJ486
Silicon P Channel MOS FET
Description
Low frequency power switching
Features
• Low on-resistance
R_{DS (on)} = 0.5 Ω typ. (at V_GS = –4 V, I_D = –100 mA)
• 2.5 V gate drive devices.
• Small package (MPAK).
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
Note: Marking is “ZU–”.
3
G
1
2
REJ03G0869-0300
(Previous: ADE-208-512A)
Rev.3.00
Sep 07, 2005
D
1. Source
2. Gate
3. Drain
S
Rev.3.00 Sep 07, 2005 page 1 of 6