2SJ483 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching

2SJ483
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
R_{DS (on)} = 0.08 Ω typ (at V_GS = –10 V, I_D = –2.5 A)
• 4 V gate drive devices.
• Large current capacitance
I_D = –5 A
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
REJ03G0867-0200
(Previous: ADE-208-519)
Rev.2.00
Sep 07, 2005
D
321
G
S
1. Source
2. Drain
3. Gate
Rev.2.00 Sep 07, 2005 page 1 of 6