2SJ479 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon P Channel DV-L MOS FET High Speed Power Switching

2SJ479(L), 2SJ479(S)
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
R_{DS (on)} = 25 mΩ typ.
• 4 V gate drive devices.
• High speed switching
REJ03G0866-0300
Rev.3.00
Jun 05, 2006
Outline
RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (L) )
(Package name: LDPAK (S)-(1) )
D
4
4
12
3
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.3.00 Jun 05, 2006 page 1 of 7