2SJ451 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ451
Silicon P Channel MOS FET
Description
Low frequency power switching
Features
• Low on-resistance.
• Low drive power
• 2.5 V gate drive device.
• Small package (MPAK).
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
G
1
2
Note: Marking is “ZK–”.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
Symbol
V_DSS
V_GSS
I_D
I_{D (pulse)} ^{Note 1}
Pch
Tch
Tstg
REJ03G0864-0400
Rev.4.00
Sep 07, 2007
D
1. Source
2. Gate
3. Drain
S
Value
–20
±20
–0.2
–0.4
150
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
mW
°C
°C
REJ03G864-0400 Rev.4.00 Sep 07, 2007
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