2SJ387 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ387(L), 2SJ387(S)
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0862-0200
(Previous: ADE-208-1196)
Rev.2.00
Sep 07, 2005
Features
• Low on-resistance
• Low drive current
• 2.5 V Gate drive device can be driven from 3 V Source
• Suitable for Switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
4
D
123
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00 Sep 07, 2005 page 1 of 7