2SJ386 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ386
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
G
321
REJ03G0861-0200
(Previous: ADE-208-1195)
Rev.2.00
Sep 07, 2005
D
1. Source
2. Drain
3. Gate
S
Rev.2.00 Sep 07, 2005 page 1 of 5