2SJ356C Datasheet, PDF (1/8 Pages) Renesas Technology Corp – P-CHANNEL MOSFET FOR SWITCHING

Preliminary Data Sheet
2SJ356C
P-CHANNEL MOSFET FOR SWITCHING
R07DS1260EJ0300
Rev.3.00
Aug 17, 2015
Description
The 2SJ356C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven
directly by a 4.0 V power source.
Features
 Directly driven by a 4.0 V power source.
 Low on-state resistance
RDS(on)1 = 388 m  MAX. (VGS = -10 V, ID = -1.0 A)
RDS(on)2 = 514 m MAX. (VGS = -4.5 V, ID = -1.0 A)
RDS(on)3 = 556 m MAX. (VGS = -4.0 V, ID = -1.0 A)
Ordering Information
Part Number
Lead Plating
Packing
Package
2SJ356C-T1-AZ/AY
-AZ : Sn-Bi , -AY : Pure Sn
1000p/Reel
SC-62 (3p PoMM)
Remark "-AZ/AY" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Marking XE
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC)
ID(DC)
Drain Current (pulse) ^Note1
ID(pulse)
Total Power Dissipation ^Note2
PT
Channel Temperature
Tch
Storage Temperature
Tstg
Note1 PW  10 ms, Duty Cycle  1%
Note2 16 cm² X 0.7mm, ceramic substrate used
-60
V
∓20
V
∓2.0
A
∓6.0
A
2.0
W
150
C
55 to 150
C
R07DS1260EJ0300 Rev.3.00
Aug 17, 2015
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