2SJ350 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ350
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
REJ03G0859-0200
(Previous: ADE-208-138)
Rev.2.00
Sep 07, 2005
D
123
G
S
1. Gate
2. Drain
3. Source
Rev.2.00 Sep 07, 2005 page 1 of 6