2SJ278 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ278
Silicon P Channel MOS FET
Description
High speed power switching
REJ03G0856-0200
(Previous: ADE-208-1190)
Rev.2.00
Sep 07, 2005
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for switching regulator, DC-DC converter
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK ^R )
D
321
G
4
1. Gate
2. Drain
3. Source
4. Drain
Note: Marking is “MY”.
S
*UPAK is a trademark of Renesas Technology Corp.
Rev.2.00 Sep 07, 2005 page 1 of 6