2SJ217 Datasheet, PDF (1/7 Pages) Hitachi Semiconductor – Silicon P-Channel MOS FET

2SJ217
Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
 Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
1
2
3
G
S
REJ03G0850-0200
(Previous: NON-084)
Rev.2.00
Sep 07, 2005
1. Gate
2. Drain (Flange)
3. Source
Rev.2.00 Sep 07, 2005 page 1 of 6