2SJ181_11 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET

2SJ181(L), 2SJ181(S)
Silicon P Channel MOS FET
Description
High speed power switching
Preliminary Datasheet
R07DS0395EJ0300
(Previous: REJ03G0848-0200)
Rev.3.00
May 16, 2011
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZD-A
(Package name: DPAK (L)-(1) )
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
4
D
123
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
I_{D (pulse)} ^{Note 1}
I_DR
Pch ^{Note 2}
Tch
Tstg
Value
–600
±15
–0.5
–1.0
–0.5
20
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS0395EJ0300 Rev.3.00
May 16, 2011
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