2SD2655_11 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon NPN Epitaxial Planer Low Frequency Power Amplifier

Preliminary Datasheet
2SD2655
Silicon NPN Epitaxial Planer
Low Frequency Power Amplifier
R07DS0281EJ0300
(Previous: REJ03G0810-0200)
Rev.3.00
Mar 28, 2011
Features
• Small size package: MPAK (SC–59A)
• Large Maximum current: I_C = 1 A
• Low collector to emitter saturation voltage: V_CE(sat) = 0.3 V max.(at I_C/I_B = 0.5 A/0.05 A)
• High power dissipation: P_C = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))
• Complementary pair with 2SB1691
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
Note: Marking is “WM-“.
1
2
1. Emitter
2. Base
3. Collector
Absolute Maximum Ratings
Item
Symbol
Collector to Base Voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
V_CBO
V_CEO
V_EBO
I_C
ic(peak)
Collector power dissipation
P_C
Junction temperature
Tj
Storage temperature
Tstg
Note: *When using alumina ceramic board (25 x 60 x 0.7 mm)
Ratings
60
50
6
1
2
800*
150
−55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
mW
°C
°C
R07DS0281EJ0300 Rev.3.00
Mar 28, 2011
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