2SD2655 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

2SD2655
Silicon NPN Epitaxial Planer
Low Frequency Power Amplifier
REJ03G0810-0200
(Previous ADE-208-1388A)
Rev.2.00
Aug.10.2005
Features
• Small size package: MPAK (SC–59A)
• Large Maximum current: I_C = 1 A
• Low collector to emitter saturation voltage: V_CE(sat) = 0.3 V max.(at I_C/I_B = 0.5 A/0.05 A)
• High power dissipation: P_C = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))
• Complementary pair with 2SB1691
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
Note: Marking is “WM-“.
1
2
1. Emitter
2. Base
3. Collector
Absolute Maximum Ratings
Item
Symbol
Collector to Base Voltage
V_CBO
Collector to emitter voltage
V_CEO
Emitter to base voltage
V_EBO
Collector current
I_C
Collector peak current
ic(peak)
Collector power dissipation
P_C
Junction temperature
Tj
Storage temperature
Tstg
Note: *When using alumina ceramic board (25 x 60 x 0.7 mm)
Ratings
60
50
6
1
2
800*
150
−55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
mW
°C
°C
Rev.2.00 Aug 10, 2005 page 1 of 5