2SD2651 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial High Voltage Amplifier

2SD2651
Silicon NPN Epitaxial
High Voltage Amplifier
Features
• High breakdown voltage
V_CEO = -300V min
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92 (1))
REJ03G0809-0200
(Previous ADE-208-976)
Rev.2.00
Aug.10.2005
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
3
2
1
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
300
300
5
50
750
150
-55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Rev.2.00 Aug 10, 2005 page 1 of 5