2SC5509 Datasheet, PDF (1/10 Pages) NEC – NPN SILICON RF TRANSISTOR

Preliminary Data Sheet
2SC5509
NPN SILICON RF TRANSISTOR
FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
R09DS0056EJ0300
Rev.3.00
Mar 5, 2013
FEATURES
• Ideal for medium output power amplification
• NF = 1.2 dB TYP., G_a = 12 dB TYP. @ V_CE = 2 V, I_C = 10 mA, f = 2 GHz
• Maximum available power gain: MAG = 14 dB TYP. @ V_CE = 2 V, I_C = 50 mA, f = 2 GHz
• f_T = 25 GHz technology adopted
• Flat-lead 4-pin thin-type super minimold (M04) package
<R> _{ORDERING INFORMATION}
Part Number
2SC5509
2SC5509-T2
Order Number
2SC5509-A
2SC5509-T2-A
Quantity
50 pcs (Non reel)
3 kpcs/reel
Package
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face
the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Note Free air.
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_totNote
T_j
T_stg
Ratings
Unit
15
V
3.3
V
1.5
V
100
mA
190
mW
150
°C
−65 to +150
°C
THERMAL RESISTANCE
Parameter
Junction to Case Resistance
Junction to Ambient Resistance
Symbol
R_{th j-c}
R_{th j-a}
Ratings
95
650
Unit
°C /W
°C /W
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0056EJ0300 Rev.3.00
Mar 5, 2013
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