2SC5508 Datasheet, PDF (1/10 Pages) NEC – NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

Preliminary Data Sheet
2SC5508
NPN SILICON RF TRANSISTOR
FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
R09DS0055EJ0200
Rev.2.00
Mar 5, 2013
FEATURES
• Ideal for low-noise, high-gain amplification applications
• NF = 1.1 dB TYP., G_a = 16 dB TYP. @ V_CE = 2 V, I_C = 5 mA, f = 2 GHz
• Maximum available power gain: MAG = 19 dB TYP. @ V_CE = 2 V, I_C = 20 mA, f = 2 GHz
• f_T = 25 GHz technology adopted
• Flat-lead 4-pin thin-type super minimold (M04) package
<R> _{ORDERING INFORMATION}
Part Number Order Number
Quantity
2SC5508
2SC5508-A
50 pcs (Non reel)
2SC5508-T2 2SC5508-T2-A 3 kpcs/reel
2SC5508-T2B 2SC5508-T2B-A 15 kpcs/reel
Package
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face
the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Note Free air.
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_totNote
T_j
T_stg
Ratings
Unit
15
V
3.3
V
1.5
V
35
mA
115
mW
150
°C
−65 to +150
°C
THERMAL RESISTANCE
Parameter
Junction to Case Resistance
Junction to Ambient Resistance
Symbol
R_{th j-c}
R_{th j-a}
Ratings
150
650
Unit
°C /W
°C /W
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0055EJ0200 Rev.2.00
Mar 5, 2013
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