2SC4702 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC4702
Silicon NPN Epitaxial
Application
High voltage amplifier
Features
• High breakdown voltage
V_CEO = 300 V
• Small Cob
Cob = 1.5 pF Typ.
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
Note: Marking is “XV–”.
1
2
REJ03G0729-0300
(Previous ADE-208-1120A)
Rev.3.00
Aug.10.2005
1. Emitter
2. Base
3. Collector
Absolute Maximum Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
Tj
Tstg
Ratings
300
300
5
50
150
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Rev.3.00 Aug 10, 2005 page 1 of 5