2SB1691_15 Datasheet, PDF (1/6 Pages) Renesas Technology Corp – Silicon PNP Epitaxial Planer Low Frequency Power Amplifier

Preliminary Datasheet
2SB1691
Silicon PNP Epitaxial Planer
Low Frequency Power Amplifier
R07DS0272EJ0400
Rev.4.00
Jan 10, 2014
Features
• Small size package: MPAK (SC–59A)
• Large Maximum current: I_C = –1 A
• Low collector to emitter saturation voltage: V_CE(sat) = –0.3 V max.(at I_C/I_B = –0.5 A/–0.05 A)
• High power dissipation: P_C = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))
• Complementary pair with 2SD2655
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
Note: Marking is “WL-“.
1
2
1. Emitter
2. Base
3. Collector
Absolute Maximum Ratings
Item
Symbol
Collector to base Voltage
V_CBO
Collector to emitter voltage
V_CEO
Emitter to base voltage
V_EBO
Collector current
I_C
Collector peak current
ic(peak)
Collector power dissipation
P_C
Junction temperature
Tj
Storage temperature
Tstg
Note: *When using alumina ceramic board (25 x 60 x 0.7 mm)
Ratings
−60
−50
–6
–1
–2
800*
150
−55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
mW
°C
°C
R07DS0272EJ0400 Rev.4.00
Jan 10, 2014
Page 1 of 5