2SB1691 Datasheet, PDF (1/5 Pages) Renesas Technology Corp – Silicon PNP Epitaxial Planer Low Frequency Power Amplifier

2SB1691
Silicon PNP Epitaxial Planer
Low Frequency Power Amplifier
REJ03G0482-0200
(Previous ADE-208-1387A (Z))
Rev.2.00
Dec.09.2004
Features
• Small size package: MPAK (SC–59A)
• Large Maximum current: I_C = –1 A
• Low collector to emitter saturation voltage: V_CE(sat) = –0.3 V max.(at I_C/I_B = –0.5 A/–0.05 A)
• High power dissipation: P_C = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))
• Complementary pair with 2SD2655
Outline
MPAK
Note: Marking is “WL-“.
3
1. Emitter
2. Base
1
3. Collector
2
Absolute Maximum Ratings
Item
Symbol
Collector to base Voltage
V_CBO
Collector to emitter voltage
V_CEO
Emitter to base voltage
V_EBO
Collector current
I_C
Collector peak current
ic(peak)
Collector power dissipation
P_C
Junction temperature
Tj
Storage temperature
Tstg
Note: *When using alumina ceramic board (25 x 60 x 0.7 mm)
Ratings
−60
−50
–6
–1
–2
800*
150
−55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
mW
°C
°C
Rev.2.00, Dec.09.2004, page 1 of 4