2SA1646 Datasheet, PDF (1/6 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

Preliminary Data Sheet
2SA1646,2SA1646-Z
Silicon Power Transistor
R07DS0048EJ0200
Rev.2.00
Jul 01, 2010
Description
The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-to-
emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers,
solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching.
Features
• Fast switching speed
• Low collector-to-emitter saturation voltage:
⎯ V_CE(sat) = −0.3 V MAX. @I_C = −6 A
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current
Base current
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_D(DC)
I_C(pulse)
I_B(DC)
P_T
P_T
T_j
T_stg
Conditions
PW ≤ 300 μs, duty cycle ≤ 10%
Tc = 25°C
Ta = 25°C
Ratings
Unit
−150
V
−100
V
−7.0
V
−10
A
−20
A
−6.0
A
40
W
1.5
W
150
°C
−55 to +150
°C
Package Drawing (Unit: mm)
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Electrode Connection
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R07DS0048EJ0200 Rev.2.00
Jul 01, 2010
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