MMBT2222A Datasheet, PDF (4/5 Pages) NXP Semiconductors – NPN switching transistor

RATING AND CHARACTERISTICS CURVES ( MMBT2222A )
10
RS=OPTIMUM
SOURCE
8.0
IC=1.0mA,RS=150W
500uA,RS=200W
RESISTANCE
100uA,RS=2.0KW
6.0
50uA,RS=4.0KW
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (KHz)
Figure 5.Frequency Effects
50 100
30
20
Ceb
10
7.0
5.0
3.0
2.0
0.1 0.2 0.3
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Figure 7.Capacitances
CCb
20 30 50
1.0
TJ=25^OC
0.8
VBE(sat)@IC/IB=10
1.0V
0.6
VBE(on)@VCE=10V
0.4
0.2
VCE(sat)@IC/IB=10
0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 9."On" Voltages
500 1.0k
10
f=1.0KHz
8.0
IC=50uA
6.0
100uA
500uA
1.0mA
4.0
2.0
0
50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
RS,SOURCE RESISTANCE (OHMS)
Figure 6.Source Resistance Effects
500
VCE=20V
TJ=25^OC
300
200
100
70
50 _{1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100}
IC, COLLECTOR CURRENT (mA)
Figure 8.Currunt-Gain Bandwidth Product
+0.5
0
R_qVC for VCE(sat)
-0.5
-1.0
-1.5
-2.0
R_qVB for VBE
-2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA)
Figure 10.Temperature Coefficients