BC556A Datasheet, PDF (3/3 Pages) Rectron Semiconductor – PNP Silicon Planar Epitaxial Transistors

BC556,A,B,C
BC557,A,B,C
BC558,A,B,C
Electrical Characteristics (Ta=25 ^oC unless otherwise specified)
DESCRIPTION
SYMBOL TEST CONDITION
DYNAMICS CHARACTERISTICS
Transition Frequency
f_T
I_C = 10mA, V_CE = 5V, f = 100MH_Z
Collector output Capacitance
C_cbo
V_CB = 10V, f = 1MH_Z
Noise Figure
NF
VCE = 5V, I_C = 0.2mA
Small Signal Current Gain
R_S= 2k ohm, f = 1KH_Z, B= 200H_Z
h_fe
V_CE = 5V, I_C = 2mA, f= 1kH_Z
A
B
C
Input Impedance
h_ie
V_CE = 5V, I_C = 2mA, f= 1kH_Z
A
B
C
Voltage Feedback
h_re
V_CE = 5V, I_C = 2mA, f= 1kH_Z
A
B
C
Output Admittance
h_oe
V_CE = 5V, I_C = 2mA, f= 1kH_Z
A
B
C
MIN TYP MAX UNITS
150
6
2 10
MH_Z
pF
dB
220
330
600
1.6 2.7 4.5
3.2 4.5 8.5
6.0 8.7 15
k ohm
1.5
x10
2.0
3.0
18 30
30 60
60 110
u MHO
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