TIP120 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(5.0A,60-100V,65W)

RATING AND CHARACTERISTICS CURVES (TIP120)
1.0
0.7
D =0.5
0.5
D =0.2
0.3
0.2 _{D =0.1}
0.1
0.07 _{D =0.05}
0.05
D =0.02
0.03
0.02 _{D =0.01}
SINGLE PULSE
0.01
0.01 0.02
0.05
0.1
0.2
0.5 1.0 2.0
P(pk)
ZqJC = r(t) RqJC
RqJC= 1.92^OC/W MAX.
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk)-TC = P(pk) ZqJC(t)
t1
t2
DUTY CYCLE, D =t1/t2
5.0 10
20
50
100 200
500 1000
t, TIME, (mS)
Figure1 THERMAL RESISTANCE
20
TJ=150^OC
10
5.0
500uS
DC
2.0
1mS
1.0
5mS
0.5
BONDING WIRE LIMITED
THERMALLY LIMITED
0.2
@TC=25^OC(SINGLE PULSE)
0.1
SECOND BREAKDOWN LIMITED
CURVE APPLY BELOW
0.05
RATED VCEO
100uS
There are two limitations on the power handing ability of a tran-
sistor average junction temperature and second breakdown.Safe
operating aresa curves indicate IC-VCE limits of the transistor th-
at must be observed for reliable operation, i.e.,the transistor must
not be subjected to greater dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk)=150^OC,TC is variable d-
epending on conditions. Second breakdown pulse limit are valid
for duty cycles to 10% provided TJ(pk)<150^OC.TJ(pk) may be calc-
ulated from the data in Figure 1. At high case temperatures, ther-
mal limitations will reduce the power that can be handled to valu-
es less than the limitations imposed by second breakdown.
0.02
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE, (V)
Figure2 ACTIVE-REGION SAFE OPERATING AREA
10K
5K
TC= 25^OC
3K
VCE= 40 Vdc
2K
IC= 3.0 Adc
1K
500
300
200
100
50
30
20
10
1.0 2.0 5.0 10 20
50 100 200 500 1K
f, FREQUENCY, (KHz)
Figure3 Small-Signal Current Gain
300
200
Cob
100
70
Cjb
50
TJ= 25^OC
30
0.1 0.2
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE, (V)
Figure4 CAPACITANCE
50 100