MMBT3906 Datasheet, PDF (2/5 Pages) NXP Semiconductors – PNP switching transistor

ELECTRICAL CHARACTERISTICS (@TA=25^OC unless otherwise noted)
Chatacteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (2) (IC= -1.0 mAdc, IB= 0)
Collector-Base Breakdown Voltage (IC= -100uAdc, IE= 0)
Emitter-Base Breakdown Voltage (IE= -100uAdc, IC= 0)
Base Cutoff Current (VCE= -30Vdc, VEB= -3.0Vdc)
Collector Cutoff Current (VCE= -30Vdc, VEB= -3.0Vdc)
ON CHARACTERISTICS(1)
DC Current Gain (IC= -0.1mAdc, VCE= -1.0Vdc)
(IC= -1.0mAdc, VCE= -1.0Vdc)
(IC= -10mAdc, VCE= -1.0Vdc)
(IC= -50mAdc, VCE= -1.0Vdc)
(IC= -100mAdc, VCE= -1.0Vdc)
Collector-Emitter Saturation Voltage (IC= -10mAdc, IB= -1.0mAdc)
(IC= -50mAdc, IB= -5.0mAdc)
Base-Emitter Saturation Voltage (IC= -10mAdc, IB= -1.0mAdc)
(IC= -50mAdc, IB= -5.0mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (IC= -10mAdc, VCE= -20Vdc, f= 100MHz)
Output Capacitance (VCB= -5.0Vdc, IE= 0, f= 1.0MHz)
Input Capacitance (VEB= -0.5Vdc, IC= 0, f= 1.0MHz)
Input lmpedance (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)
Voltage Feedback Ratio (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)
Small-Signal Current Gain (VCE= -10Vdc, IC= -10mAdc, f= 1.0kHz)
Output Admittance (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)
Noise Figure (VCE= -5.0Vdc, IC= -100uAdc, RS= 1.0kW, f= 1.0kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC= -3.0Vdc, VBE= 0.5Vdc, IC= -10mAdc, IB1= -1.0mAdc)
Storage Time
Fall Time
(VCC= -3.0Vdc, IC= -10mAdc, IB1= IB2= -1.0mAdc)
Note : Pulse Test: Pulse Width<-300ms,Duty Cycle-<2.0%
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
hFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
td
tr
ts
tf
-40
-40
-5.0
-
-
60
80
100
60
30
-
-
-0.65
-
250
-
-
2.0
0.1
100
3.0
-
-
-
-
-
Max
-
-
-
-50
-50
-
-
300
-
-
-0.25
-0.4
-0.85
-0.95
-
4.5
10
12
10
400
60
4.0
35
35
225
75
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
-
Vdc
Vdc
MHz
pF
pF
kW
X 10-⁴
-
umhos
dB
ns
ns