MMBT2222LT1 Datasheet, PDF (2/4 Pages) Motorola, Inc – General Purpose Transistors

ELECTRICAL CHARACTERISTICS (@TA=25^OC unless otherwise noted)
Chatacteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= 10mAdc, IB= 0)
Collector-Base Breakdown Voltage (IC= 10µAdc, IE= 0)
Emitter-Base Breakdown Voltage (IE= 10µAdc, IC= 0)
Collector Cutoff Current (VCE= 60Vdc,VEB(off)= 3.0Vdc
Collector Cutoff Current (VCB= 60Vdc, IE= 0)
(VCB= 60Vdc, IE= 0, TA= 125^OC)
ON CHARACTERISTICS
DC Current Gain (IC= 0.1mAdc, VCE= 10Vdc)
(IC= 1.0mAdc, VCE= 10Vdc)
(IC= 10mAdc, VCE= 10Vdc)
(IC= 150mAdc, VCE= 10Vdc) (2)
(IC= 500mAdc, VCE= 10Vdc) (2)
Collector-Emitter Saturation Voltage (2) (IC= 150mAdc, IB= 15mAdc)
(IC= 500mAdc, IB= 50mAdc)
Base-Emitter Saturation Voltage (2) (IC= 150mAdc, IB= 15mAdc)
(IC= 500mAdc, IB= 50mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (3) (IC= 20mAdc, VCE= 20Vdc, f= 100MHz)
Input Capacitance (VEB=0.5Vdc, IC= 0, f= 1.0MHz)
NOTES : 2. Pulse Test: Pulse Width-<300µs,Duty Cycle-<2.0%
3. f_T is defined as the frequency at which |hfe| extrapolates to unity
Symbol
Min
V(BR)CEO
30
V(BR)CBO
60
V(BR)EBO
5.0
ICEX
-
-
ICBO
-
35
50
hFE
75
100
30
-
VCE(sat)
-
-
VBE(sat)
-
fT
250
Cibo
-
Max
-
-
-
0.1
0.01
10
-
-
-
-
-
0.4
1.6
1.3
2.6
-
30
Unit
Vdc
Vdc
Vdc
µAdc
µAdc
-
Vdc
Vdc
MHz
pF
RECTRON