EFM201 Datasheet, PDF (2/2 Pages) Rectron Semiconductor – SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 2.0 Ampere)

RATING AND CHARACTERISTIC CURVES ( EFM201 THRU EFM206 )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
3.0
(+)
25 Vdc
(approx)
(-)
D.U.T
1
NON-
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
OSCILLOSCOPE
(+)
(NOTE 1)
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
0
-0.25A
-1.0A
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
100
2.0
1cm
SET TIME BASE FOR
10 ns/cm
Single Phase
1.0 Half Wave 60Hz
Resistive or
Inductive Load
0
0 25 50 75 100 125 150175
AMBIENT TEMPERATURE ( )
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
TJ = 150
10
TJ = 100
1.0
1.0
TJ = 25
.1
.1
TJ = 25
Pulse Width = 300uS
1% Duty Cycle
.01
.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
105
90
8.3ms Single Half Sine-Wave
(JEDEC Method)
75
60
45
30
15
0
1
2
5 10 20
50 100
NUMBER OF CYCLES AT 60Hz
.001
0 .2 .4 .6 .8 1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
TJ = 25
EEFFMM220051~~EEFFMM220064
4
2
1
.1 .2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON