EFM101 Datasheet, PDF (2/2 Pages) Rectron Semiconductor – SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere)

RATING AND CHARACTERISTIC CURVES ( EFM101 THRU EFM106 )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NON-INDUCTIVE
trr
+0.5A
(+)
25 Vdc
(approx)
(-)
D.U.T
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
(-)
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
5/10 ns/cm
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
2.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
1.0
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE ( )
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
100
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
TJ = 150
10
TJ = 100
1.0
1.0
TJ = 25
.1
TJ = 25
.1
Pulse Width = 300uS
.01
1% Duty Cycle
.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
70
60
50
40
TJ = 25
30
20
10
0
.1
.5 1 2 5 10 20 50 100 200 400
NUMBER OF CYCLES AT 60Hz
.001
0 .2 .4 .6 .8 1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
TJ = 25
6
4
2
1
.1 .2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE, ( V )
RECTRON