CMBD1201 Datasheet, PDF (2/4 Pages) Continental Device India Limited – SILICON PLANAR EPITAXIAL HIGH SPEED DIODES

RATING AND CHARACTERISTICS CURVES ( CMBD1201 THUE CMBD1205 )
500
400
300
200
100
0
0 25 50 75
100 125 150 175
TA, AMBIENT TEMPERATURE(^OC)
FIG.1 FORWARD DERATING CURVE
10,000
1000
100
10
1.0
0.1
.01
0
1
2
VF, INSTANTANEOUS FORWARD VOLTAGE(V)
FIG.2 FORWARD CHARACTERISTICS
1,000
100
10
1
0
100
180
TJ, JUNCTION TEMPERATURE(^OC)
FIG.3 LEAKAGE CURRENT VS. JUNCTION TEMPERATURE
RECTRON