2N4401 Datasheet, PDF (2/6 Pages) NXP Semiconductors – NPN switching transistor

ELECTRICAL CHARACTERISTICS (@TA=25^OC unless otherwise noted)
Chatacteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1) (IC= 1.0 mAdc, IB= 0)
Collector-Base Breakdown Voltage (IC= 0.1uAdc, IE= 0)
Emitter-Base Breakdown Voltage (IE= 0.1uAdc, IC= 0)
Base Cutoff Current (VCE= 35Vdc, VBE(off)= 0.4Vdc)
Collector Cutoff Current (VCE= 35Vdc, VEB= 0.4Vdc)
ON CHARACTERISTICS(1)
DC Current Gain (IC= 0.1mAdc, VCE= 1.0Vdc)
(IC= 1.0mAdc, VCE= 1.0Vdc)
(IC= 10mAdc, VCE= 1.0Vdc)
(IC= 150mAdc, VCE= 1.0Vdc)
(IC= 500mAdc, VCE= 2.0Vdc)
Collector-Emitter Saturation Voltage (1) (IC= 150mAdc, IB= 15mAdc)
(IC= 500mAdc, IB= 50mAdc)
Base-Emitter Saturation Voltage (1) (IC= 150mAdc, IB= 15mAdc)
(IC= 500mAdc, IB= 50mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (IC= 20mAdc, VCE= 10Vdc, f= 100MHz)
Output Capacitance (VCB= 5.0Vdc, IE= 0, f= 1.0MHz)
Input Capacitance (VEB= 0.5Vdc, IC= 0, f= 1.0MHz)
Input lmpedance (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz)
Voltage Feedback Ratio (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz)
Small-Signal Current Gain (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz)
Output Admittance (VCE= 10Vdc, IC= 1.0mAdc, f= 1.0kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC= 30Vdc, VEB= 2.0Vdc, IC= 150mAdc, IB1= 15mAdc)
Storage Time
Fall Time
(VCC= 30Vdc, IC= 150mAdc, IB1= IB2= 15mAdc)
Note : Pulse Test: Pulse Width-<300ms,Duty Cycle<-2.0%
Symbol
Min
V(BR)CEO
40
V(BR)CBO
60
V(BR)EBO
6.0
IBEV
-
ICEX
-
20
40
hFE
80
100
40
-
VCE(sat)
-
0.75
VBE(sat)
-
fT
250
Ccb
-
Ceb
-
hie
1.0
hre
0.1
hfe
40
hoe
1.0
td
-
tr
-
ts
-
tf
-
Max
-
-
-
0.1
0.1
-
-
-
300
-
0.4
0.75
0.95
1.2
-
6.5
30
15
8.0
500
30
15
20
225
30
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
-
Vdc
Vdc
MHz
pF
pF
kohms
X 10-⁴
-
umhos
ns
ns