TMPG06-27 Datasheet, PDF (1/3 Pages) Rectron Semiconductor – TRANSIENT VOLTAGE SUPPRESSOR 300 WATT PEAK POWER 1.0 WATT STEADY STATE

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
TMPG06-27
TRANSIENT VOLTAGE SUPPRESSOR
300 WATT PEAK POWER 1.0 WATT STEADY STATE
FEATURES
* Designed for the hood applications
* Available in uni-directional only
* Glass passivated chip construction
* Excellent clamping capability
* Low incremental surge resistance
* Fast response time: typically less than 1.0ps from 0 Volts to
V(BR)
* For devices with V(BR)>=10V, ID are typically less than 1.0uA
MECHANICAL DATA
* Case: Molded plastic black body
* Epoxy: Device hasUL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.19 gram
Ratings at 25 ^oC ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^oC ambient temperature unless otherwise specified.
R-1
.787 (20.0)
MIN.
.025 (0.65)
.021 (0.55) ^DIA.
.126 (3.2)
.106 (2.7)
.787 (20.0)
MIN.
.102 (2.6)
.091 (2.3) ^DIA.
Dimensions in inches and (millimeters)
Electrical characteristics apply in uni-directional only
MAXIMUM RATINGS (At TA = 25^oC unless otherwise noted)
RATINGS
Peak Power Dissipation with a 10/1000uS (Note 1, Fig.1)
Peak Pulse Current with a 10/1000uS waveform ( Note 1, 2, Fig.3 )
SYMBOL
PPPM
IPPM
VALUE
300
SEE TABLE 1
Steady State Power Dissipation (Note 2)
PM(AV)
1.0
Peak Forward Surge Current per Fig.5 (Note 2,4)
Maximum Instantaneous Forward Voltage at 25A (Note 4)
Operating and Storage Temperature Range
IFSM
VF
TJ, TSTG
40
3.5
-55 to + 150
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25^oC per Fig.2.
2. Mounted on 0.2 X 0.2”( 5.0 X 5.0mm ) copper pad to each terminal.
3. Lead temperature at TL = 75^oC
4. Measured on 8.3mS single half sine-wave or equivalent square wave, duty cycle = 4 pules per minute maximum.
5. Peak pulse power waveform is 10/1000uS.
UNITS
Watts
Amps
Watts
Amps
Volts
0_C
2002-4